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Smith / Admittance Matching Workbench
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Device & Target Impedance
P2 Device RP2 Device X F1
Ω
Ω
F2
Ω
Ω
F3
Ω
Ω
Design frequencies
Microstrip substrate
Physical dimensions use the mm/mil selector in the top bar; mm is the default. Displayed values and typed geometry inputs follow that selection, while calculations and saved geometry remain canonical in mm. Microstrip / stubs use Hammerstad–Jensen quasi-static geometry with finite copper-thickness correction and Kirschning–Jansen frequency dispersion. The status bar warns when width/height or normalised frequency is outside the model's preferred range; at Q/V band use appropriately thin substrates and validate final layouts with EM analysis.
Snap schematic
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Select an element, type the exact Keyboard increment in its editor if desired, then use ↑/↓ to change its active value and ←/→ to scale that increment by ×0.1 / ×10. Drag elements to reorder. Double-click a symbol to focus its editor. Touchstone blocks are applied as complete measured/simulated networks, so their Smith trajectory appears as a step rather than an artificial partial-network animation.
Selected element
Select an element to edit all parameters.
Automatic matching
Auto Solve tunes each unlocked element's selected solve variable against F1/F2/F3. If the chain is empty, Suggest L-match tests common two-element series/shunt L/C topologies.
Return loss / network gain
F1–F3 design span
Network gain ≠ S12. Network gain is Device→Target transducer gain using the entered P2 Device Z with P1 terminated in Target R; P2 Device Z is interpolated linearly in R+jX across the F1–F3 design span.
Smith / admittance · target-side match
Output metrics
Worst RL
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Max VSWR
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Centre Z
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Elements
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f MHzZout ΩΓ∠Γ°RL dBVSWRQ=|X|/RY mSEq seriesEq shunt